2014. 3. 31 1/2 semiconductor technical data PG05FBESC tvs diode for esd protection in portable electronics revision no : 4 protection in portable electronics applications.features h 50 watts peak pulse power (tp=8/20 s) h transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 5a(tp=8/20 s) h bidirectional type pin configuration structure. h small package for use in portable electronics. h suitable replacement for multi-layer varistors in esd protection applications. h protects one i/o or power line. h low clamping voltage. h low leakage current. applications h cell phone handsets and accessories. h microprocessor based equipment. h personal digital assistants (pda s) h notebooks, desktops, & servers. h portable instrumentation. h pagers peripherals. maximum rating (ta=25 ? ) esc dim millimeters a bc d e 1.60 0.10 1.20 0.100.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e f 0.13 0.05 fg + _ + _ + _ + _ + _ + _ 0.20 0.10 + _ gg electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 50 w junction temperature t j -55 q 150 ? storage temperature t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =1ma 5.8 - 7.8 v reverse leakage current i r v rwm =5v - - 5 a junction capacitance c j v r =0v, f=1mhz - - 60 pf marking 5b 21 21 downloaded from: http:///
2014. 3. 31 2/2 PG05FBESC revision no : 4 downloaded from: http:///
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